Concepedia

Power GaAs MESFET: Reliability aspects and failure mechanisms

C. Canali, F. Castaldo, F. Fantini, D. Ogliari, M. Vanzi, M. Zicolillo, Enrico Zanoni

Microelectronics Reliability · 1984 · 14 citations · 6 references

Open access

Concepts

EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice ReliabilityHigh-frequency Semiconductor DevicesSemiconductor DefectsSemiconductor ReliabilityDevice DegradationElectrical ReliabilityFailure MechanismsGate Oxide DegradationPower Device ReliabilityReliability DegradationWear-out Mechanisms

References

6

Diffusion barriers in thin films

M.−A. Nicolet · Thin Solid Films · 1978 · 684 citations

Natural Sciences, Materials Engineering, Materials Science +10

Studies of the Ti-W/Au metallization on aluminum

Ronald S. Nowicki, Joel M. Harris, M‐A. Nicolet et al. · Thin Solid Films · 1978 · 80 citations

Natural Sciences, Materials Engineering, Materials Science +11

The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of aging

Gregory S. Marlow, Mukunda B. Das, Luis L. Tongson · Solid-State Electronics · 1983 · 39 citations

Engineering, Electrical Engineering, Materials Science +12

Metallurgical behaviour of Ni/AuGe ohmic contacts to GaAs

Agis A. Iliadis, K.E. Singer · Solid State Communications · 1984 · 27 citations

Engineering, Electrical Engineering, Materials Science +14

Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts

Yoshinori Wada, Ken-ichi Chino · Solid-State Electronics · 1983 · 17 citations

Engineering, Materials Engineering, Materials Science +16