Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts

Physics of Semiconductor Devices

Geoffrey Pridham · Electronics and Power · 1970 · 4K citations

Engineering, Electrical Engineering, Physics +12

Thin Films—Interdiffusion and Reactions

J. M. Poate, K. N. Tu, Jean-Claude Mayor et al. · Journal of The Electrochemical Society · 1979 · 1.7K citations

Natural Sciences, Materials Engineering, Materials Science +12

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

Characteristics of aluminum-titanium electrical contacts on silicon

R.W. Bower · Applied Physics Letters · 1973 · 124 citations

Engineering, Electrical Engineering, Materials Science +17

Microstructure and Schottky barrier height of iridium silicides formed on silicon

Iwao Ohdomari, T. S. Kuan, K. N. Tu · Journal of Applied Physics · 1979 · 114 citations

Engineering, Materials Engineering, Materials Science +17