R.W. Bower - Concepedia

Author

R.W. Bower

Also Known As

R W Bower, R. Bower, R. Böwer, R. W. Bower, R.W Bower, R.W. BOWER, R.W. Bower, Robert Bower, Robert W. Bower, Robert W. Bower Robert W. Bower

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

University of California, Davis HRL Laboratories (United States)California Institute of Technology Los Alamos National Laboratory

About

R.W. Bower is an author at University of California, Davis specializing in applied physics, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	24	990
2	Applied Physics	15	21	929
3	Chemistry	3	3	139
4	Natural Sciences	2	2	58
5	Chemical Engineering	1	1	179

R.W. Bower

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Growth Kinetics Observed in the Formation of Metal Silicides on Silicon R.W. Bower, J. W. Mayer Applied Physics Letters EngineeringSilicon On InsulatorChemical EngineeringGrowth Kinetics ObservedSilicene	1972	179
Characteristics of aluminum-titanium electrical contacts on silicon R.W. Bower Applied Physics Letters EngineeringPostmetallization Heat TreatmentIntegrated CircuitsAluminum-titanium Metallization SchemeSilicon On Insulator	1973	124
Formation kinetics and structure of Pd2Si films on Si R.W. Bower, D. Sigurd, R. E. Scott Solid-State Electronics Materials ScienceMaterials EngineeringEngineeringSurface ScienceApplied Physics	1973	115
Low temperature Si3N4 direct bonding R.W. Bower, M.S. Ismail, B. Roberds Applied Physics Letters Materials ScienceMaterials EngineeringClean LayersWafer Scale ProcessingHigh Temperature Materials	1993	80
Characterization of polycrystalline layers by channelling measurements D. Sigurd, R.W. Bower, W. F. van der Weg, Thin Solid Films Materials ScienceEngineeringFiber StructureInterior LayerApplied Physics	1973	65
MOS field effect transistors formed by gate masked ion implantation R.W. Bower, H.G. Dill, K. G. Aubuchon, IEEE Transactions on Electron Devices Electrical EngineeringIon ImplantationEngineeringSemiconductor DeviceBoron Ions	1968	56
Light-induced absorption changes in reduced lithium niobate F. Jermann, Maria Cristina Pais Simon, R.W. Bower, Ferroelectrics Optical MaterialsEngineeringOptical AbsorptionChemistryLuminescence Property	1995	45
Zn and Te Implantations into GaAs J. W. Mayer, O. J. Marsh, R.G. Mankarious, Journal of Applied Physics SemiconductorsIi-vi SemiconductorElectrical EngineeringEngineeringApplied Physics	1967	38
The design and fabrication of a magnetically actuated micromachined flow valve R. L. Smith, R.W. Bower, Scott D. Collins Sensors and Actuators A Physical EngineeringMicromachinesMicrofabricationFluid MechanicsMechanical Engineering	1990	34
The influence of boron ion implantation on hydrogen blister formation in <i>n</i>-type silicon T. Höchbauer, K.C. Walter, R. B. Schwarz, Journal of Applied Physics Materials ScienceComputer Code TrimIon ImplantationBoron NitrideEngineering	1999	30

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