Concepedia

B. Roberds

BR

Statistics

Publications

10

Citations

643

H-Index

10

Active since

1993

Affiliations

Intel (United States)(Current)

University of California, Davis

B. Roberds is an author at Intel (United States) specializing in applied physics, engineering, and microelectronics.

Top concepts

EngineeringApplied PhysicsMicroelectronicsMaterial ScienceElectrical EngineeringMicrofabricationNanoelectronicsSurface ScienceIntegrated CircuitsElectronic Packaging

Publications per year

1993–2002

10

Publications

10

Chemical Free Room Temperature Wafer To Wafer Direct Bonding

Shari Farrens, James Dekker, Jason Kenneth Smith et al. · Journal of The Electrochemical Society · 1995 · 146 citations

Engineering, Integrated Circuits, Vacuum Device +16

30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays

R. Chau, J. Kavalieros, B. Roberds et al. · 2002 · 110 citations

Electrical Engineering, Engineering, Vlsi Design +11

A 50 nm depleted-substrate CMOS transistor (DST)

R. Chau, J. Kavalieros, Barry M. Doyle et al. · 2002 · 101 citations

Electrical Engineering, Engineering, Nanoelectronics +11

High permittivity thin film nanolaminates

H. Zhang, Raj Solanki, B. Roberds et al. · Journal of Applied Physics · 2000 · 97 citations · Full text

Materials Science, Zro2–hfo2 Nanolaminates, Electrical Engineering +10

Low temperature Si3N4 direct bonding

R.W. Bower, M.S. Ismail, B. Roberds · Applied Physics Letters · 1993 · 80 citations

Materials Science, Materials Engineering, Clean Layers +14

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