Carrier-gas dependence of ELO GaN grown by hydride VPE

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

Kensaku Motoki, Takuji Okahisa, Naoki Matsumoto et al. · Japanese Journal of Applied Physics · 2001 · 313 citations

Engineering, Electrical Engineering, Materials Science +17

High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

Shin‐ichi Nagahama, Naruhito Iwasa, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 2000 · 248 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial Lateral Overgrowth of GaAs by LPE

Tatau Nishinaga, Tsuyoshi Nakano, Suian Zhang · Japanese Journal of Applied Physics · 1988 · 164 citations

Engineering, Materials Engineering, Materials Science +17