GaAs junction lasers containing the amphoteric dopants Ge and Si

A low-threshold room-temperature injection laser

I. Hayashi, M. B. Panish, P. W. Foy · IEEE Journal of Quantum Electronics · 1969 · 147 citations

Engineering, Electrical Engineering, Optics +11

EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K

Hans–Albert Rupprecht, J. M. Woodall, K. Konnerth et al. · Applied Physics Letters · 1966 · 114 citations

Engineering, Electrical Engineering, Materials Science +12

A technique for the preparation of low-threshold room-temperature GaAs laser diode structures

M. B. Panish, I. Hayashi, S. Sumski · IEEE Journal of Quantum Electronics · 1969 · 74 citations

Engineering, Electrical Engineering, Materials Science +10

Laser Transition and Wavelength Limits of GaAs

P.D. Dapkus, N. Holonyak, J. A. Rossi et al. · Journal of Applied Physics · 1969 · 47 citations

Natural Sciences, Materials Science, Physics +17

STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GaAs <i>p-n</i> JUNCTIONS

D. Keith Wilson · Applied Physics Letters · 1963 · 33 citations

Engineering, Electrical Engineering, Electronic Materials +4