H. R. Zwicker

Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs

D. L. Keune, N. Holonyak, R. D. Burnham et al. · Journal of Applied Physics · 1971 · 36 citations

Engineering, Electrical Engineering, Materials Science +14

Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP

D. R. Scifres, N. Holonyak, R. D. Burnham et al. · Solid-State Electronics · 1971 · 25 citations

Engineering, Electrical Engineering, Physics +13

Optical phase shift measurement of residual defects in vapor epitaxial GaAsP

H. R. Zwicker, D. R. Scifres, N. Holonyak et al. · Solid State Communications · 1971 · 23 citations

Engineering, Materials Engineering, Materials Science +14

GaAs junction lasers containing the amphoteric dopants Ge and Si

R. D. Burnham, P.D. Dapkus, N. Holonyak et al. · Solid-State Electronics · 1970 · 21 citations

Engineering, Materials Science, Physics +14

Solid solubility of Zn in Si

Morley M. Blouke, N. Holonyak, B. G. Streetman et al. · Journal of Physics and Chemistry of Solids · 1970 · 16 citations

Natural Sciences, Chemistry, Materials Science +10