Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 413 citations

Engineering, Materials Engineering, Materials Science +17

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

K. Hiramatsu, K. Nishiyama, Atsushi Motogaito et al. · physica status solidi (a) · 1999 · 283 citations

Engineering, Materials Engineering, Materials Science +17

GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

D. D. Koleske, A. E. Wickenden, R.L. Henry et al. · Journal of Crystal Growth · 2001 · 231 citations

Engineering, Materials Engineering, Materials Science +9