Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

Surface states at steam-grown silicon-silicon dioxide interfaces

C. N. Berglund · IEEE Transactions on Electron Devices · 1966 · 668 citations

Electrical Engineering, Semiconductor Device, Engineering +12

A quasi-static technique for MOS C-V and surface state measurements

Markus Kühn · Solid-State Electronics · 1970 · 552 citations

Surface Characterization, Electrical Engineering, Engineering +11

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Dai Okamoto, Hiroshi Yano, Kenji Hirata et al. · IEEE Electron Device Letters · 2010 · 300 citations

Materials Science, Semiconductors, Electrical Engineering +14

Modified Deal Grove model for the thermal oxidation of silicon carbide

Yongwook Song, Sarit Dhar, L. C. Feldman et al. · Journal of Applied Physics · 2004 · 256 citations

Materials Science, Chemical Engineering, Engineering +12

Shallow electron traps at the 4H–SiC/SiO2 interface

V. V. Afanas’ev, A. Stesmans, Gerhard Pensl et al. · Applied Physics Letters · 2000 · 142 citations

High Density, Semiconductor Technology, Electrical Engineering +10