Applied Physics Letters · 1989 · 37 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionDopingEpitaxial GrowthSemiconductor PhysicsSemiconductor Thin FilmsSilicon MaterialsCrystal PerfectionDefect DensityEpitaxial Film GrowthEpitaxial Growth KineticsEpitaxial Thin-film GrowthProfile ControlSilicon Chemical Vapor DepositionSilicon Epitaxy
High quality thin silicon epitaxial films have been grown on heavily doped p+ substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The epitaxial growth kinetics have been studied by examining the dependence of growth rate on the deposition temperature, the volume percentage of SiH2Cl2, and the total gas flow rate. Submicron epitaxial layers with hyperabrupt dopant transition (<200 Å/decade) and excellent crystalline perfection with low defect density have been obtained.
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Epitaxially grown base transistor for high-speed operation
T. Sugii, Tatsuya Yamazaki, T. Fukano et al. · IEEE Electron Device Letters · 1987 · 22 citations