EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignDevice CharacterizationDevice ModelingResistivityTemperature DependenceTemperature SensitivityThermal Effects In Integrated Circuits
The incremental rate of the latch-up holding current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</inf> ) with decreasing temperature is larger in the bulk substrate than in the epitaxial substrate. The substrate dependence is mainly due to the difference in the temperature coefficients of the material resistivity. Although I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">h</inf> increases significantly with decreasing temperature, the latch-up triggering voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">trig</inf> ) in an inverter remains relatively constant, posing a limit for VLSI device miniaturization at low temperatures.
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Operation of bulk CMOS devices at very low temperatures
H. Hanamura, Masashi Aoki, T. Masuhara et al. · IEEE Journal of Solid-State Circuits · 1986 · 101 citations
Engineering, Computer Engineering, Electrical Engineering +14
Operation of Bulk CMOS Devices at Very Low Temperatures
S. Hanamura, Masashi Aoki, T. Masuhara et al. · Symposium on VLSI Technology · 1983 · 26 citations
Engineering, Computer Engineering, Electrical Engineering +14