Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

Dislocation Interaction, Misfit Dislocations, Applied Physics +2

Relaxed Ge<i>x</i>Si1−<i>x</i> structures for III–V integration with Si and high mobility two-dimensional electron gases in Si

Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 532 citations

Optical Materials, Engineering, Optoelectronic Devices +18

Anomalous strain relaxation in SiGe thin films and superlattices

F. K. LeGoues, B.S. Meyerson, J. F. Morar · Physical Review Letters · 1991 · 362 citations

Materials Science, Epitaxial Growth, Engineering +12

Dislocations and strain relief in compositionally graded layers

J. Tersoff · Applied Physics Letters · 1993 · 321 citations

Materials Science, Materials Engineering, Engineering +15

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

F. Schäffler, D. Többen, H.-J. Herzog et al. · Semiconductor Science and Technology · 1992 · 276 citations

Electrical Engineering, Engineering, Sige Buffer Layer +10