Applied Physics Letters · 1992 · 25 citations · 8 references
EngineeringMaterials SciencePhysicsElectronic MaterialsOptoelectronicsSemiconductor MaterialsDefects In Electronic MaterialsOptical Properties Of SemiconductorsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsAnnealingInfrared Absorption SpectroscopyMolecular Beam EpitaxyOptical PropertiesPhotoluminescencePhotoluminescence SpectroscopySemiconductor CharacterizationValence Band
GaAs grown by molecular beam epitaxy (MBE) at 300 °C is annealed at 800 °C and optical properties are studied using photoluminescence spectroscopy (PL) and infrared-absorption spectroscopy. Three kinds of defects are observed. One of them is attributed to gallium vacancies with an energy level at 0.3 eV above the valence-band edge. The concentration of gallium vacancies is increased by the high-temperature annealing. The GaAs can render inactive free electrons of 1.3×1018 cm−3 even after annealing at 800 °C for 10 min.
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations