Strain-dependent defect formation kinetics and a correlation between flatband voltage and nitrogen distribution in thermally nitrided SiO<i>x</i>N<i>y</i>/Si structures

Abstract

A correlation between the nitridation condition dependent nitrogen distribution and the magnitude of the flatband voltage shift in SiOxNy/Si structures is identified and an explanation proposed in terms of a strain-dependent kinetics of formation of defects near the interface. The proposed explanation derives from, and is consistent with, the recent demonstration of the influence of the interfacial strain on the nitridation kinetics of thermally nitrided SiOxNy/Si films.