J. Angilello - Concepedia

Author

J. Angilello

IBM Research - Thomas J. Watson Research Center

Also Known As

J. ANGILELLO, J. Angilello, J. Angilello., Joseph Angilello

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

J. Angilello is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	1K
2	Applied Physics	15	16	993
3	Natural Sciences	1	1	10
4	Chemistry	1	1	23
5	Computer Science	1	1	10

J. Angilello

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation Temperatures E. A. Irene, E. Tierney, J. Angilello Journal of The Electrochemical Society EngineeringOxidation ResistanceLow Oxidation TemperaturesExperimental ThermodynamicsThermal Oxidation	1982	226
Modification of niobium film stress by low-energy ion bombardment during deposition J. J. Cuomo, J. M. E. Harper, C. R. Guarnieri, Journal of Vacuum Science and Technology Niobium Film StressEngineeringVacuum DeviceChemical DepositionIon Implantation	1982	160
Lattice Compression from Conduction Electrons in Heavily Doped Si:As G. S. Cargill, J. Angilello, K. L. Kavanagh Physical Review Letters Materials ScienceSemiconductorsEngineeringCrystalline DefectsPhysics	1988	119
Disorder in Al-Li-Cu and Al-Mn-Si Icosahedral Alloys Paul A. Heiney, Peter A. Bancel, Paul Horn, Science Materials ScienceMaterials EngineeringIcosahedral AlIcosahedral PhaseEngineering	1987	80
Lanthanide gallate perovskite-type substrates for epitaxial, high-T <sub>c</sub> superconducting Ba <sub>2</sub> YCu <sub>3</sub> O <sub>7-δ</sub> films E. A. Giess, R. L. Sandstrom, W. J. Gallagher, IBM Journal of Research and Development	1990	67
Contact reaction between Si and Pd-W alloy films J. O. Olowolafe, K. N. Tu, J. Angilello Journal of Applied Physics Materials ScienceMaterials EngineeringSchottky Barrier HeightEngineeringLayered Material	1979	57
Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In-plane epitaxial relation and channeling analysis Chin‐An Chang, Joyce C. Liu, J. Angilello Applied Physics Letters Cu FilmsEngineeringThin Film Process TechnologySilicon On InsulatorSemiconductors	1990	55
Thermal stability of Si1−<i>x</i>C<i>x</i>/Si strained layer superlattices Mark S. Goorsky, Subramanian S. Iyer, K. Eberl, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsSic PrecipitationApplied Physics	1992	53
Observations of stresses in thin films of palladium and platinum silicides on silicon J. Angilello, F. M. d’Heurle, S. Petersson, Journal of Vacuum Science and Technology EngineeringSilicide FilmsResidual StressSilicon On InsulatorStressstrain Analysis	1980	44
The interpretation of dislocation contrast in x-ray topographs of GaAs1−<i>x</i> P<i>x</i> Sebastian Mäder, A. E. Blakeslee, J. Angilello Journal of Applied Physics Materials ScienceEngineeringDislocation InteractionPhysicsCrystalline Defects	1974	37

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