Enhanced device performance of AlGaN/GaN HEMTs using HfO₂ high-<i>k</i> dielectric for surface passivation and gate oxide

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

Wide-bandgap Semiconductor, Engineering, Wide-band-gap Oxides +17

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices · 2001 · 1.4K citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

30-W/mm GaN HEMTs by Field Plate Optimization

Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

XPES studies of oxides of second- and third-row transition metals including rare earths

D. D. Sarma, C. N. R. Rao · Journal of Electron Spectroscopy and Related Phenomena · 1980 · 658 citations

Materials Science, Inorganic Chemistry, Rare Earth Mineral +9

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

S.C. Binari, K. Ikossi, J.A. Roussos et al. · IEEE Transactions on Electron Devices · 2001 · 632 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12