Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization

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Karen Holloway, P. M. Fryer, C. Cabral et al. · Journal of Applied Physics · 1992 · 448 citations

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Tantalum as a diffusion barrier between copper and silicon

Karen Holloway, P. M. Fryer · Applied Physics Letters · 1990 · 261 citations

Engineering, Materials Engineering, Materials Science +17

Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

Kyung-Hoon Min, Kyu-Chang Chun, Ki‐Bum Kim · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 261 citations

Natural Sciences, Materials Engineering, Materials Science +17

Diffusion barrier property of TaN between Si and Cu

Takeo Oku, Eiji Kawakami, Masaki Uekubo et al. · Applied Surface Science · 1996 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +10

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations

E. Kolawa, Jen‐Sue Chen, J.S. Reid et al. · Journal of Applied Physics · 1991 · 222 citations · Full text

Engineering, Materials Engineering, Materials Science +17