Applied Physics Letters · 1993 · 35 citations · 10 references
Natural SciencesMaterials SciencePhysicsPlasma PhysicsSurface ScienceThin FilmsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin Film Optical PropertiesThin-film DepositionEtch ChemistryEtch RatePhysical PropertiesPlasma-enhanced DepositionReactive Gas ChemistrySilica-based MaterialsSilicon DioxideSpectral Absorption Bands
Silicon dioxide films have been deposited using a SiH4+O2 microwave plasma excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was O2/SiH4∼7. The substrate was not heated intentionally (T<150 °C). The effect of ion energy during deposition, in the 10–150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate, and electrical measurements. For ion energies ≳50 eV, many of the film characteristics are close to those of thermal SiO2
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