G. Lucovsky - Concepedia

Author

G. Lucovsky

North Carolina State University

Also Known As

G Lucovsky, G. LUCOVSKY, G. Lucovsky, Gerald LUCOVSKY

189

Publications

Citations

H-Index

Concepts

All Affiliations

North Carolina State University

About

G. Lucovsky is an author at North Carolina State University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	76	3.9K
2	Applied Physics	31	73	3.9K
3	Chemistry	20	23	2.1K
4	Natural Sciences	13	14	639
5	Chemical Engineering	3	3	139

G. Lucovsky

Publications

4.2K

Citations

H-Index

Page 1

	Year	Citations
Infrared spectroscopic study of SiO<i>x</i> films produced by plasma enhanced chemical vapor deposition P. G. Pai, S. S. Chao, Yasuo Takagi, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceOxygen ConcentrationEngineeringElectronic MaterialsSurface Science	1986	794
Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition G. Lucovsky, P. D. Richard, D. V. Tsu, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringThin Film Process TechnologyChemistryChemical DepositionPlasma Processing	1986	237
Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma-enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor Jeremy Theil, D. V. Tsu, M. W. Watkins, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Optical MaterialsEngineeringWater VaporChemistrySi–oh Groups	1990	178
Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics G. Lucovsky, Yongping Wu, H. Niimi, Applied Physics Letters EngineeringSemiconductor Device PhysicsGlass MaterialSilicon On InsulatorSemiconductor Device	1999	164
Band alignment between (100)Si and complex rare earth∕transition metal oxides V. V. Afanas’ev, A. Stesmans, Chao Zhao, Applied Physics Letters Materials EngineeringMaterials ScienceTransition Metal ChalcogenidesEngineeringOxide Electronics	2004	148
Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy Jeffrey W. Keister, J. E. Rowe, J. Kołodziej, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena	1999	135
Effects of thermal history on stress-related properties of very thin films of thermally grown silicon dioxide J. T. Fitch, G. Lucovsky, E. Kobeda, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceSemiconductorsOptical MaterialsEngineeringStress-related Properties	1989	127
Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy Jeffrey W. Keister, J. E. Rowe, J. Kołodziej, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceSemiconductorsCrystalline SiliconEngineeringUltrathin Sio2/si	1999	109
Ultrafast recombination and trapping in amorphous silicon K. Seibert, H. Kurz, Gregory N. Parsons, Physical review. B, Condensed matter Transient GratingPhotonicsEngineeringPhysicsOptical Properties	1990	98
Chemical bonding of hydrogen and oxygen in glow-discharge<i>–</i>deposited thin films of<i>a</i>-Ge:H and<i>a</i>-Ge:(H,O) G. Lucovsky, S. S. Chao, J. Yang, Physical review. B, Condensed matter Monohydride BondingEngineeringGlow DischargeChemistrySemiconductor Nanostructures	1985	90

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