G. Lucovsky

Infrared spectroscopic study of SiO<i>x</i> films produced by plasma enhanced chemical vapor deposition

P. G. Pai, S. S. Chao, Yasuo Takagi et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 794 citations

Materials Science, Oxygen Concentration, Engineering +12

Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition

G. Lucovsky, P. D. Richard, D. V. Tsu et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 237 citations

Engineering, Thin Film Process Technology, Chemistry +16

Local bonding environments of Si–OH groups in SiO2 deposited by remote plasma-enhanced chemical vapor deposition and incorporated by postdeposition exposure to water vapor

Jeremy Theil, D. V. Tsu, M. W. Watkins et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1990 · 178 citations

Optical Materials, Engineering, Water Vapor +16

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

G. Lucovsky, Yongping Wu, H. Niimi et al. · Applied Physics Letters · 1999 · 164 citations

Engineering, Semiconductor Device Physics, Glass Material +17

Band alignment between (100)Si and complex rare earth∕transition metal oxides

V. V. Afanas’ev, A. Stesmans, Chao Zhao et al. · Applied Physics Letters · 2004 · 148 citations · Full text

Materials Engineering, Materials Science, Transition Metal Chalcogenides +15