Suppression of short step bunching generated on 4H–SiC Si-face substrates with vicinal off-angle

Growth and characterization of 4H-SiC epilayers on substrates with different off-cut angles

W. Chen, M. A. Capano · Journal of Applied Physics · 2005 · 128 citations

Materials Engineering, Semiconductors, Materials Science +14

In situ substrate preparation for high-quality SiC chemical vapour deposition

C. Hallin, Fredrik Owman, Per Mårtensson et al. · Journal of Crystal Growth · 1997 · 117 citations

Materials Science, Materials Engineering, Engineering +8

The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology

Albert A. Burk, L.B. Rowland · Journal of Crystal Growth · 1996 · 94 citations

Materials Engineering, Electrical Engineering, Epitaxial Growth +8

Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability

Junichiro Sameshima, Osamu Ishiyama, Atsushi Shimozato et al. · Materials science forum · 2013 · 52 citations

Semiconductor Technology, 4H-sic Epitaxial Surface, Electrical Engineering +11

Effect of Additional Silane on In Situ H<sub>2</sub> Etching prior to 4H-SiC Homoepitaxial Growth

Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura et al. · Materials science forum · 2007 · 27 citations

Materials Science, Materials Engineering, Chemical Engineering +15