Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

Elements of X-ray diffraction

H. Lipson · Contemporary Physics · 1979 · 3.5K citations

Natural Sciences, Materials Science, Physics +9

Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

Nobuyuki Sugii, Kiyokazu Nakagawa, Shinya Yamaguchi et al. · Applied Physics Letters · 1999 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Strain relaxation and mosaic structure in relaxed SiGe layers

P. M. Mooney, F. K. LeGoues, J. O. Chu et al. · Applied Physics Letters · 1993 · 61 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reduction of threading dislocation density in SiGe layers on Si (001) using a two-step strain–relaxation procedure

Akira Sakai, Ken Sugimoto, Takeo Yamamoto et al. · Applied Physics Letters · 2001 · 43 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Microscopic strain analysis of semiconductor crystals using a synchrotron X-ray microbeam

Junji Matsui, Yoshiyuki Tsusaka, K. Yokoyama et al. · Journal of Crystal Growth · 2002 · 24 citations

Engineering, Materials Engineering, Materials Science +16