Shogo Mochizuki

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov et al. · IEEE Electron Device Letters · 2016 · 58 citations

Engineering, Electrical Engineering, Materials Science +15

Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction

Shogo Mochizuki, Akira Sakai, Noriyuki Taoka et al. · Thin Solid Films · 2005 · 26 citations

Engineering, Materials Engineering, Materials Science +16

Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology

Shogo Mochizuki, Nicolas Loubet, Pial Mirdha et al. · 2023 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Backside Power Distribution for Nanosheet Technologies Beyond 2nm

Ruilong Xie, Wonhyuk Hong, Chen Zhang et al. · 2024 · 19 citations

Engineering, Electrical Engineering, Microelectronics +11

Quantification of local strain distributions in nanoscale strained SiGe FinFET structures

Shogo Mochizuki, Conal E. Murray, Anita Madan et al. · Journal of Applied Physics · 2017 · 15 citations

Engineering, Materials Engineering, Materials Science +17