Oleg Gluschenkov

Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics

Min Yang, E. P. Gusev, M. Ieong et al. · IEEE Electron Device Letters · 2003 · 164 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

Ruijie Xie, P. Montanini, Kerem Akarvardar et al. · 2016 · 139 citations

Engineering, Electron-beam Lithography, Finfet Technology +18

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov et al. · IEEE Electron Device Letters · 2016 · 58 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Characterization of wafer geometry and overlay error on silicon wafers with nonuniform stress

Timothy A. Brunner, Vinayan C. Menon, Cheuk Wun Wong et al. · Journal of Micro/Nanolithography MEMS and MOEMS · 2013 · 47 citations · Full text

Engineering, Mechanical Engineering, Residual Stress +18

Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

Yaocheng Liu, Oleg Gluschenkov, Jinghong Li et al. · 2007 · 42 citations

Electrical Engineering, Engineering, Nanoelectronics +11