2007 · 42 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSilicon MaterialsStrain EngineeringChannel EngineeringChannel Length ScalingCmos ScalingElectron MobilityHigh-electron-mobility TransistorsProcess CostSiliconStrain Effects
Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.
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Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s rule
M. Berti, D. De Salvador, A. V. Drigo et al. · Applied Physics Letters · 1998 · 96 citations · Full text