Nicolas Loubet

Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet

Chun Wing Yeung, Jingyun Zhang, Robin Chao et al. · 2018 · 94 citations

Engineering, Electrical Engineering, Physics +17

Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length

A. Khakifirooz, Kangguo Cheng, A. Reznicek et al. · IEEE Electron Device Letters · 2011 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology

Shogo Mochizuki, Nicolas Loubet, Pial Mirdha et al. · 2023 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors

Curtis Durfee, Subhadeep Kal, S. Pancharatnam et al. · ECS Transactions · 2021 · 16 citations

Engineering, Electrical Engineering, Electronic Materials +16

Mapping of the mechanical response in Si/SiGe nanosheet device geometries

Conal E. Murray, Hanfei Yan, C. Lavoie et al. · Communications Engineering · 2022 · 16 citations · Full text

Engineering, Materials Engineering, Materials Science +17