Selective electroless Ni deposition onto Pd-activated Si for integrated circuit fabrication

Theoretical electrochemistry

J. O’M. Bockris · Electrochimica Acta · 1973 · 488 citations

Structure and growth kinetics of Ni2Si on silicon

K. N. Tu, Wei Chu, J. W. Mayer · Thin Solid Films · 1975 · 212 citations

Materials Science, Engineering, Applied Physics +4

Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.

S. P. Murarka, D. B. Fraser · Journal of Applied Physics · 1980 · 131 citations

Materials Science, Materials Engineering, Solid Solubility +15

1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspective

B. L. Crowder, S. Zirinsky · IEEE Journal of Solid-State Circuits · 1979 · 70 citations

Materials Engineering, Electrical Engineering, Engineering +13

Formation of intermediate phases, Ni3Si2 and Pt6Si5: Nucleation, identification, and resistivity

P. Gas, F. M. d’Heurle, F. K. LeGoues et al. · Journal of Applied Physics · 1986 · 49 citations

Engineering, Theoretical Inorganic Chemistry, Solid-state Chemistry +17