Japanese Journal of Applied Physics · 2015 · 362 citations · 174 references
Wide-bandgap SemiconductorEngineeringSemiconductorsNanoelectronicsWide-bandgap SemiconductorsGan-based White LedsPower SemiconductorsCompound SemiconductorMaterials ScienceElectrical EngineeringAluminum Gallium NitrideSemiconductor MaterialMicroelectronicsCategoryiii-v SemiconductorSolid-state LightingApplied PhysicsGan Power DeviceFull BloomOptoelectronics
Wide‑bandgap semiconductors such as GaN and SiC are poised for solid‑state lighting and power applications, yet power devices remain less adopted than GaN LEDs, and emerging materials like diamond and oxides face unknown defect, surface, and interface challenges. The review seeks to identify the key issues that must be resolved for wide‑bandgap power devices. The authors examine fundamental property issues of wide‑bandgap semiconductors to guide their full development.
Wide-bandgap semiconductors are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. While GaN-based white LEDs have rapidly become widespread in the lighting industry, SiC- and GaN-based power devices have not yet achieved their popular use, like GaN-based white LEDs for lighting, despite having reached the practical phase. What are the issues to be addressed for such power devices? In addition, other wide-bandgap semiconductors such as diamond and oxides are attracting focusing interest due to their promising functions especially for power-device applications. There, however, should be many unknown phenomena and problems in their defect, surface, and interface properties, which must be addressed to fully exploit their functions. In this review, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their "full bloom".
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations