IEEE Electron Device Letters · 1989 · 13 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsWide Band Gap SemiconductorsGaas Microwave Integrated CircuitsHigh PerformanceHigh-frequency ElectronicsLow-temperature PerformanceMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsRadio-frequency Integrated Circuit DesignSensitivity To Light
The fabrication of high-performance digital integrated circuits with low-temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2- mu m-gate-length transistors show a g/sub m/ of 600 mS/mm and an extrapolated f/sub T/ of 80 GHz. Backgating and light sensitivity are eliminated with the LTB technology. Static source-coupled FET logic frequency dividers exhibit a maximum clock rate of 22 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations