W. J. Schaff

Intrinsic Electron Accumulation at Clean InN Surfaces

Imran Mahboob, T. D. Veal, C. F. McConville et al. · Physical Review Letters · 2004 · 485 citations

Surface Fermi Level, Surface Characterization, Electrical Engineering +13

Origin of electron accumulation at wurtzite InN surfaces

Imran Mahboob, T. D. Veal, Louis F. J. Piper et al. · Physical Review B · 2004 · 212 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +11

Evidence for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Doping of InN

Reese E. Jones, K. M. Yu, S. X. Li et al. · Physical Review Letters · 2006 · 209 citations

Materials Science, Math Xmlns, Electrical Engineering +14

Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

B. Arnaudov, T. Paskova, Björn Magnusson et al. · Physical Review B · 2004 · 182 citations

Donor and acceptor concentrations in degenerate InN

D. C. Look, H. J. Lü, W. J. Schaff et al. · Applied Physics Letters · 2002 · 144 citations · Full text

Materials Science, Semiconductors, Aluminium Nitride +14