Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1984 · 29 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesMicrowave MaterialsMicrowave Semiconductor DevicesSemiconductor Device MaterialsWide Band Gap SemiconductorsCarrier Material QualityHall EffectHall Effect MeasurementsHigh-frequency ElectronicsMicrowave DevicesSemiconductor CharacterizationSemiconductor Materials For Microwave DevicesSuperlattice Materials
A study of three different types of buffers for GaAs power MESFET’s has been performed. Materials characterization was carried out by photoluminescence, DLTS and Hall measurements, and, as a final test, microwave performance of FET devices made from these materials was determined. It has been found that superlattice buffered structures consisting of 100 periods of 270 Å Al0.45Ga0.55As/30 Å GaAs show improvement in material quality and microwave performance over those of GaAs buffered devices.