Characterization of optical and crystal qualities in InxGa1–xN/InyGa1–yN multi-quantum wells grown by MOCVD

Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Takashi Matsuoka, Naoto Yoshimoto, T. Sasaki et al. · Journal of Electronic Materials · 1992 · 254 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Growth of () compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes

Shuji Nakamura · Microelectronics Journal · 1994 · 96 citations

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

S. Keller, Shigefusa F. Chichibu, M. S. Minsky et al. · Journal of Crystal Growth · 1998 · 71 citations

Wide-bandgap Semiconductor, Engineering, Physics +8

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

S. Keller, B.P. Keller, D. Kapolnek et al. · Journal of Crystal Growth · 1997 · 67 citations

Materials Engineering, Materials Science, Epitaxial Growth +10

Spiral Growth of InGaN Nanoscale Islands on GaN

S. Keller, Umesh K. Mishra, Steven P. DenBaars et al. · Japanese Journal of Applied Physics · 1998 · 57 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +11