Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells - Concepedia

Concepedia

Publication | Closed Access

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

71

Citations

19

References

1998

Year

S. Keller, Shigefusa F. Chichibu, M. S. Minsky, Evelyn L. Hu, Umesh K. Mishra, Steven P. DenBaars

Journal of Crystal Growth

Wide-bandgap SemiconductorEngineeringPhysicsIngan/gan Quantum WellsGrowth RateApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor

References

	Year	Citations

Page 1