Nanoimprint lithography at the 6 in. wafer scale

Abstract

We demonstrate the nanoimprint lithography (NIL) technique with sub 100 nm resolution, on 6 in. Si substrates. The pattern transfer is performed using a specially designed NIL machine optimized to achieve a very high degree of parallelism between stamp and substrate. The stamp is made with the help of electron beam lithography and Ni electroplating achieving features below 100 nm in size. The nanoimprint process is done in a single layer as well as in a multilayer resist scheme with subsequent O2-plasma etching and metal lift-off.