Concepedia
Microelectronics Reliability · 2004 · 103 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityDielectric PropertiesDielectricsReliability ModelingDielectric CharacterizationReliability PhysicsSilicon Nitride
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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations
Engineering, Electrical Engineering, Materials Science +17
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
K.F. Schuegraf, Chenming Hu · IEEE Transactions on Electron Devices · 1994 · 540 citations
Percolation models for gate oxide breakdown
J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations
Natural Sciences, Electrical Engineering, Materials Science +17
Electrical breakdown in thin gate and tunneling oxides
Ih-Chin Chen, S. Holland, Chenming Hu · IEEE Transactions on Electron Devices · 1985 · 484 citations
Engineering, Electrical Engineering, Physics +17
Current Transport and Maximum Dielectric Strength of Silicon Nitride Films
Simon M. Sze · Journal of Applied Physics · 1967 · 476 citations
Engineering, Materials Engineering, Materials Science +17