Analysis of retrograded double quantum well p-type MOSFET

Abstract

An analytical model for a double QW-PMOS is developed for the determination of the threshold voltages and an estimate of the hole densities in each conducting QW-channel including the silicon surface channel. Detailed analysis of the uncoupled retrograded double QW-PMOS is carried out with varying structural and physical parameters. The model adequately describes and predicts the best design choice of the double QW structure for optimum device performance. The procedure for the evaluation of the optimum structure is not just limited to QW-PMOSs in bulk silicon technology but can be also successfully applied for realizing QW-NMOS structures on relaxed buffer layers.