Deepak Kumar Nayak - Concepedia

Author

Deepak Kumar Nayak

University of California, Los Angeles ORCID

Also Known As

D. K. Nayak, D. Nayak, D.K. Nayak, DEEPAK KUMAR NAYAK, Deepak K. NAYAK, Deepak K. Nayak, Deepak Kumar Nayak, Deepak Nayak, DeepakKumar Nayak, Dhruva S Nayak

141

Publications

2.1K

Citations

H-Index

103

Concepts

All Affiliations

University of California, Los Angeles The University of Tokyo Indian Institute of Technology Kharagpur GlobalFoundries (United States)Georgia Institute of Technology

About

Deepak Kumar Nayak is an author at University of California, Los Angeles specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	42	1.8K
2	Applied Physics	18	25	1.3K
3	Computer Engineering	7	7	241
4	Business	2	2	37
5	Business Analytics	1	1	14

Deepak Kumar Nayak

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS Deepak Kumar Nayak, J.C.S. Woo, J.S. Park, IEEE Electron Device Letters Semiconductor TechnologyQuantum ScienceElectrical EngineeringEngineeringPhysics	1991	191
High-mobility <i>p</i>-channel metal-oxide-semiconductor field-effect transistor on strained Si Deepak Kumar Nayak, J.C.S. Woo, J. S. Park, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsStrained Si Pmosfet	1993	160
High-mobility strained-Si PMOSFET's Deepak Kumar Nayak, Kenichi Gotō, Akira Yutani, IEEE Transactions on Electron Devices Materials EngineeringElectrical EngineeringEngineeringSige Buffer LayerHigh-mobility Strained-si Pmosfet	1996	130
Wet oxidation of GeSi strained layers by rapid thermal processing Deepak Kumar Nayak, K. Kamjoo, Jeannie Park, Applied Physics Letters EngineeringGexsi1−x LayerOxidation ResistanceIntegrated CircuitsInterconnect (Integrated Circuits)	1990	117
Rapid thermal oxidation of GeSi strained layers Deepak Kumar Nayak, K. Kamjoo, J.C.S. Woo, Applied Physics Letters Materials ScienceOxide HeterostructuresMaterials EngineeringEpitaxial GrowthEngineering	1990	90
Low-field hole mobility of strained Si on (100) Si1−<i>x</i>Ge<i>x</i> substrate Deepak Kumar Nayak, Sang Kook Chun Applied Physics Letters Materials EngineeringSemiconductorsStrain HamiltonianSemiconductor TechnologyEngineering	1994	88
Rapid isothermal processing of strained GeSi layers Deepak Kumar Nayak, K. Kamjoo, J.S. Park, IEEE Transactions on Electron Devices Materials EngineeringMaterials ScienceElectrical EngineeringOxide InterfaceEngineering	1992	76
Monolithic 3D IC vs. TSV-based 3D IC in 14nm FinFET technology Sandeep Kumar Samal, Deepak Kumar Nayak, Motoi Ichihashi, 3D Ic ArchitectureElectrical EngineeringWafer Scale ProcessingEngineeringVlsi Design	2016	70
Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field C. K. Maiti, L. K. Bera, Sayan Dey, Solid-State Electronics Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilitySilicon On Insulator	1997	65
Evaluation and Analysis of Soft Computing Techniques for Grid Connected Photo Voltaic System to Enhance Power Quality Issues B. Pragathi, Ramesh Chandra Poonia, Polaiah Bojja, Journal of Electrical Engineering and Technology Electrical EngineeringPower EngineeringEngineeringSmart GridSolar Power	2021	57

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