J. S. Park

High-mobility <i>p</i>-channel metal-oxide-semiconductor field-effect transistor on strained Si

Deepak Kumar Nayak, J.C.S. Woo, J. S. Park et al. · Applied Physics Letters · 1993 · 160 citations

Semiconductor Technology, Electrical Engineering, Engineering +10

Si1−<i>x</i>Ge<i>x</i>/Si multiple quantum well infrared detector

R. P. G. Karunasiri, J. S. Park, K. L. Wang · Applied Physics Letters · 1991 · 114 citations

Photonic Sensor, Optical Materials, Engineering +19

Resonant tunneling through a Si/Ge<i>x</i>Si1−<i>x</i>/Si heterostructure on a GeSi buffer layer

S. S. Rhee, J. S. Park, R. P. G. Karunasiri et al. · Applied Physics Letters · 1988 · 83 citations

Wide-bandgap Semiconductor, Engineering, Silicon On Insulator +16

Normal incidence infrared detector using <i>p</i>-type SiGe/Si multiple quantum wells

J. S. Park, R. P. G. Karunasiri, K. L. Wang · Applied Physics Letters · 1992 · 72 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Normal incidence infrared detector using intervalence-subband transitions in Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

R. P. G. Karunasiri, J. S. Park, K. L. Wang · Applied Physics Letters · 1992 · 42 citations

Optical Materials, Engineering, Optoelectronic Devices +22