Electronics Letters · 1994 · 25 citations · 5 references
EngineeringMaterials SciencePhysicsElectronic MaterialsMicroelectronicsPlasma PhysicsEtching ProcessesHigh-frequency Semiconductor DevicesSemiconductor HeterostructuresThin Film EtchingWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAnisotropic EtchingDeep EtchingDry EtchingEtch MechanismsHeterostructure DevicesHeterostructuresPlasma EtchingSurface Etching
Anisotropic dry etching of GaInP/AlGaInP heterostructures has been achieved for the first time in a high-ion-density electron cyclotron resonance (ECR)-generated plasma. Structures consisting of AlInP/(GaInP/AlGaInP)/AlInP and AlGaAs/(GaInP/AlGaInP)/AlGaAs heterostructures have been etched in a CH4/H2/Cl2/BCl3/Ar plasma with smooth sidewalls and surface morphologies.
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Plasma and wet chemical etching of In0.5Ga0.5P
J. R. Lothian, J. M. Kuo, F. Ren et al. · Journal of Electronic Materials · 1992 · 89 citations