U. K. Chakrabarti

Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges

C. Constantine, D. Johnson, S. J. Pearton et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990 · 111 citations

Wide-bandgap Semiconductor, Engineering, Gaas Plasma +16

Electrical and structural changes in the near surface of reactively ion etched InP

S. J. Pearton, U. K. Chakrabarti, F. A. Baiocchi · Applied Physics Letters · 1989 · 78 citations

S. Structural Disorder, Engineering, Near Surface +23

Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etching

Todd R. Hayes, U. K. Chakrabarti, F. A. Baiocchi et al. · Journal of Applied Physics · 1990 · 72 citations

Ingaasp Surfaces, Engineering, Active Damage +16

Ion implantation damage and annealing in InAs, GaSb, and GaP

S. J. Pearton, A. R. Von Neida, Judith M. Brown et al. · Journal of Applied Physics · 1988 · 64 citations

Materials Science, Materials Engineering, Ion Implantation +13

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

S. J. Pearton, U. K. Chakrabarti, A. P. Kinsella et al. · Applied Physics Letters · 1990 · 62 citations

Electrical Engineering, Optical Materials, Engineering +13