Applied Physics Letters · 1987 · 30 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionField-effect TransistorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersSchottky ContactsSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Chemical Vapor Deposition
Schottky-barrier field-effect transistors have been fabricated from 3C-SiC and transistor operation has been studied at temperatures up to 400 °C. B-doped high-resistivity and undoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and source and drain contacts for n-type 3C-SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.
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