Electronics Letters · 2006 · 30 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHeterostructure DevicesHeterostructure Field-effect TransistorsHigh-power ConversionThreshold VoltageTransconductance
A non-recessed-gate enhancement-mode HEMT was fabricated on an undoped quaternary AlInGaN/GaN heterostructure with a thin barrier AlInGaN layer. The maximum drain current of 252 mA/mm and peak transconductance of 175 mS/mm were obtained on a 2 µm-length-gate HEMT with a large threshold voltage of 0.57 V. The enhancement-mode operation was observed in a large source-drain voltage range up to 40 V. The results imply that AlInGaN is a promising candidate for high power and high frequency applications.
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Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
W. Lanford, Tsuyoshi Tanaka, Y. Otoki et al. · Electronics Letters · 2005 · 251 citations