IEEE Transactions on Electron Devices · 2001 · 16 citations · 20 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsDielectricsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor Thin FilmsThin Film Electrical PropertiesDielectric ConstantEnduranceGate Dielectric EngineeringGate DielectricsLeakageNitridationNitride Thin FilmsTemperature Dependence
In this paper, we developed a new method to grow robust ultrathin oxynitride (E/sub OT/=18 A) film with effective dielectric constant of 7.15. By NH/sub 3/-nitridation of Si substrate, grown ultrathin Si/sub 3/N/sub 4/ With N/sub 2/O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
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