Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 874 citations

Engineering, Electrical Engineering, Materials Science +17

High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Journal of Applied Physics · 1994 · 429 citations

Engineering, Materials Engineering, Materials Science +17

Metal semiconductor field effect transistor based on single crystal GaN

M. Asif Khan, J. N. Kuznia, Amal R. Bhattarai et al. · Applied Physics Letters · 1993 · 359 citations

Engineering, Electrical Engineering, Materials Science +17

Ridge-geometry InGaN multi-quantum-well-structure laser diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1996 · 182 citations

Engineering, Electrical Engineering, Materials Science +17

Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

J. M. Van Hove, R. Hickman, Jody J. Klaassen et al. · Applied Physics Letters · 1997 · 174 citations

Engineering, Electrical Engineering, Materials Science +17