L.B Flannery

The implications of spontaneous polarization effects for carrier transport measurements in GaN

J. J. Harris, K J Lee, J. B. Webb et al. · Semiconductor Science and Technology · 2000 · 25 citations

Engineering, Materials Engineering, Materials Science +17

Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

L.B Flannery, I. Harrison, D. E. Lacklison et al. · Materials Science and Engineering B · 1997 · 15 citations

Engineering, Materials Engineering, Materials Science +12

EXAFS studies of Mg doped InN grown on Al2O3

A.V Blant, T.S. Cheng, N.J. Jeffs et al. · Materials Science and Engineering B · 1999 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +4

Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

J. J. Harris, K. J. Lee, I. Harrison et al. · physica status solidi (a) · 1999 · 13 citations

Engineering, Materials Engineering, Materials Science +17

MBE growth and characterization of magnesium-doped gallium nitride

D J Dewsnip, John Orton, D. E. Lacklison et al. · Semiconductor Science and Technology · 1998 · 13 citations

Natural Sciences, Materials Science, Physics +17