Concepedia

N.J. Jeffs

NJ

Statistics

Publications

8

Citations

128

H-Index

8

Active since

1997

Affiliations

University of Nottingham(Current)

Daresbury Laboratory

N.J. Jeffs is an author at University of Nottingham specializing in materials science, materials engineering, and gallium nitride (gan) materials.

Publications per year

1997–2001

8

Publications

8

Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

C. T. Foxon, T.S. Cheng, N.J. Jeffs et al. · Surface Science · 1999 · 30 citations

, , +13

High Temperature RF Characterisation of SiN Passivated and Unpassivated AlGaN/GaN HFETs

I. Harrison, N.W. Clayton, N.J. Jeffs · physica status solidi (a) · 2001 · 18 citations

, , +16

Reflection high-energy electron diffraction studies of wurtzite GaN grown by molecular beam epitaxy

O. H. Hughes, D. Korakakis, T. S. Cheng et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 18 citations

, , +17

EXAFS studies of Mg doped InN grown on Al2O3

A.V Blant, T.S. Cheng, N.J. Jeffs et al. · Materials Science and Engineering B · 1999 · 15 citations

, , +4

RHEED studies of the GaN surface during growth by molecular beam epitaxy

O. H. Hughes, T.S. Cheng, C. T. Foxon et al. · Journal of Crystal Growth · 1999 · 14 citations

, , +16

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