EXAFS studies of Mg doped InN grown on Al2O3

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

T.S. Cheng, L. C. Jenkins, S. E. Hooper et al. · Applied Physics Letters · 1995 · 154 citations

Engineering, Materials Engineering, Materials Science +16

Bond-length relaxation in pseudobinary alloys

Chih‐Kang Shih, W. E. Spicer, Walter A. Harrison et al. · Physical review. B, Condensed matter · 1985 · 94 citations

Natural Sciences, Materials Science, Physics +8

The growth and properties of group III nitrides

C. T. Foxon, T.S. Cheng, D. E. Lacklison et al. · Journal of Crystal Growth · 1995 · 64 citations

Natural Sciences, Chemistry, Materials Science +8

The growth and properties of mixed group V nitrides

John Orton, D. E. Lacklison, N. Baba-Ali et al. · Journal of Electronic Materials · 1995 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +10