RHEED studies of the GaN surface during growth by molecular beam epitaxy

Determination of wurtzite GaN lattice polarity based on surface reconstruction

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Applied Physics Letters · 1998 · 306 citations

Natural Sciences, Materials Engineering, Materials Science +17

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

F. A. Ponce, D. P. Bour, W. T. Young et al. · Applied Physics Letters · 1996 · 231 citations

Natural Sciences, Materials Engineering, Materials Science +17

Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

T.S. Cheng, L. C. Jenkins, S. E. Hooper et al. · Applied Physics Letters · 1995 · 154 citations

Engineering, Materials Engineering, Materials Science +16

Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

Arthur R. Smith, V. Ramachandran, R. M. Feenstra et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 121 citations · Full text

Engineering, Materials Engineering, Materials Science +17

The growth and properties of group III nitrides

C. T. Foxon, T.S. Cheng, D. E. Lacklison et al. · Journal of Crystal Growth · 1995 · 64 citations

Natural Sciences, Chemistry, Materials Science +8