W. T. Young - Concepedia

Author

W. T. Young

University of Bristol

Also Known As

W. T. Young, W. Young, W.T Young, W.T. Young

Publications

716

Citations

H-Index

Concepts

All Affiliations

University of Bristol Palo Alto Research Center Nichia Corporation (Japan)University of Surrey

About

W. T. Young is an author at University of Bristol specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	672
2	Applied Physics	9	9	678
3	Materials Engineering	2	2	211
4	Natural Sciences	1	1	19
5	Chemistry	1	1	19

W. T. Young

Publications

696

Citations

H-Index

Page 1

	Year	Citations
Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers F. A. Ponce, D. P. Bour, W. T. Young, Applied Physics Letters Wide-bandgap SemiconductorSingle CrystalsEngineeringLattice OrientationsEpitaxial Layers	1996	231
Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques F. A. Ponce, D. Cherns, W. T. Young, Applied Physics Letters Wide-bandgap SemiconductorEngineeringDiffraction TechniquesNanoelectronicsTransmission Electron Diffraction	1996	196
Observation of coreless dislocations in α-GaN D. Cherns, W. T. Young, J. W. Steeds, Journal of Crystal Growth EngineeringApplied PhysicsCondensed Matter PhysicsGan Power DeviceCategoryiii-v Semiconductor	1997	88
Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy D. Cherns, W. T. Young, Michael Sanders, Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Wide-bandgap SemiconductorEngineeringTransmission Electron MicroscopyElectronic PropertiesSemiconductors	1998	48
Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy D. Cherns, W. T. Young, F. A. Ponce Materials Science and Engineering B Materials ScienceWide-bandgap SemiconductorEngineeringTransmission Electron MicroscopyInversion Domains	1997	35
Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers F. A. Ponce, W. T. Young, D. Cherns, MRS Proceedings Aluminum Gallium NitrideApplied PhysicsGan Power DeviceInversion Domains	1996	24
Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals Yu. G. Shreter, Yu. T. Rebane, O. V. Klyavin, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorPhotoluminescenceEngineeringDislocation-related Absorption	1996	22
Photoluminescence from polymer-like hydrogenated and nitrogenated amorphous carbon films José V. Anguita, S. Ravi P. Silva, W. T. Young Journal of Applied Physics PhotoluminescencePl SignalEngineeringPhysicsCarbon-based Material	2000	19
The crystallisation of the yttrium–sialon glass: Y15.2Si14.7Al8.7O54.1N7.4 W. T. Young, L.K.L. Falk, H. Lemercier, Journal of Non-Crystalline Solids Materials ScienceGlass-ceramicEngineeringYttrium–sialon GlassGlass Material	2000	18
Low temperature growth of gallium nitride W. T. Young, S. Ravi P. Silva, José V. Anguita, Diamond and Related Materials Materials EngineeringEngineeringApplied PhysicsCondensed Matter PhysicsLow Temperature Growth	2000	15

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