W. T. Young

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

F. A. Ponce, D. P. Bour, W. T. Young et al. · Applied Physics Letters · 1996 · 231 citations

Wide-bandgap Semiconductor, Single Crystals, Engineering +18

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

F. A. Ponce, D. Cherns, W. T. Young et al. · Applied Physics Letters · 1996 · 196 citations

Wide-bandgap Semiconductor, Engineering, Diffraction Techniques +16

Observation of coreless dislocations in α-GaN

D. Cherns, W. T. Young, J. W. Steeds et al. · Journal of Crystal Growth · 1997 · 88 citations

Engineering, Applied Physics, Condensed Matter Physics +3

Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy

D. Cherns, W. T. Young, Michael Sanders et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 48 citations

Wide-bandgap Semiconductor, Engineering, Transmission Electron Microscopy +16

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

D. Cherns, W. T. Young, F. A. Ponce · Materials Science and Engineering B · 1997 · 35 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +7