Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy - Concepedia

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Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

35

Citations

14

References

1997

Year

D. Cherns, W. T. Young, F. A. Ponce

Materials Science and Engineering B

Materials ScienceWide-bandgap SemiconductorEngineeringTransmission Electron MicroscopyInversion DomainsNanotechnologyApplied PhysicsGan Power DeviceMultilayer HeterostructuresCategoryiii-v Semiconductor

References

	Year	Citations

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