R. Hickman

Electrical effects of plasma damage in p-GaN

X. A. Cao, S. J. Pearton, A. P. Zhang et al. · Applied Physics Letters · 1999 · 202 citations

Electrical Engineering, Engineering, High Voltage Engineering +6

Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

J. M. Van Hove, R. Hickman, Jody J. Klaassen et al. · Applied Physics Letters · 1997 · 174 citations

Wide-bandgap Semiconductor, Engineering, Photovoltaic Diode Arrays +16

Depth and thermal stability of dry etch damage in GaN Schottky diodes

X. A. Cao, H. Cho, S. J. Pearton et al. · Applied Physics Letters · 1999 · 146 citations

Wide-bandgap Semiconductor, Surface Passivation Treatments, Electrical Engineering +12

300°C GaN/AlGaN Heterojunction Bipolar Transistor

F. Ren, C. R. Abernathy, J. M. Van Hove et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 73 citations · Full text

Plasma damage in p-GaN

Xian Cao, A. P. Zhang, G. Dang et al. · Journal of Electronic Materials · 2000 · 33 citations

Engineering, Physics, Applied Physics +3