R. Hickman - Concepedia

Author

R. Hickman

SVT Associates (United States)

Also Known As

R Hickman, R. A. Hickman, R. Hickman, Robert Hickman

Publications

793

Citations

H-Index

Concepts

All Affiliations

SVT Associates (United States)University of Florida Sandia National Laboratories University of Minnesota Sandia National Laboratories California

About

R. Hickman is an author at SVT Associates (United States) specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	692
2	Applied Physics	11	12	692
3	Electrical Engineering	10	10	647
4	Physics	3	3	59
5	Materials Science	2	2	24

R. Hickman

Publications

765

Citations

H-Index

Page 1

	Year	Citations
Electrical effects of plasma damage in p-GaN X. A. Cao, S. J. Pearton, A. P. Zhang, Applied Physics Letters Electrical EngineeringEngineeringHigh Voltage EngineeringApplied PhysicsGan Power Device	1999	202
Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy J. M. Van Hove, R. Hickman, Jody J. Klaassen, Applied Physics Letters Wide-bandgap SemiconductorEngineeringPhotovoltaic Diode ArraysPhotovoltaic DevicesOptoelectronic Devices	1997	174
Depth and thermal stability of dry etch damage in GaN Schottky diodes X. A. Cao, H. Cho, S. J. Pearton, Applied Physics Letters Wide-bandgap SemiconductorSurface Passivation TreatmentsElectrical EngineeringElectronic DevicesEngineering	1999	146
300°C GaN/AlGaN Heterojunction Bipolar Transistor F. Ren, C. R. Abernathy, J. M. Van Hove, MRS Internet Journal of Nitride Semiconductor Research	1998	73
Plasma damage in p-GaN Xian Cao, A. P. Zhang, G. Dang, Journal of Electronic Materials EngineeringPhysicsApplied PhysicsGan Power DevicePlasma Physics	2000	33
GaN/AlGaN HBT fabrication F. Ren, Jung Han, R. Hickman, Solid-State Electronics Electrical EngineeringEngineeringGan/algan Hbt FabricationNanoelectronicsApplied Physics	2000	31
GaN PN junction issues and developments R. Hickman, J. M. Van Hove, P. P. Chow, Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	2000	27
Inductively coupled plasma damage in GaN Schottky diodes X. A. Cao, A. P. Zhang, G. Dang, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Electrical EngineeringEngineeringHigh Voltage EngineeringDiode QualityApplied Physics	1999	17
Cl[sub 2]/Ar High-Density-Plasma Damage in GaN Schottky Diodes A. P. Zhang, G. Dang, F. Ren, Journal of The Electrochemical Society Electrical EngineeringSchottky Barrier HeightEngineeringHigh Voltage EngineeringPhysics	2000	14
Effect of thermal stability of GaN epi-layer on the Schottky diodes K.N Lee, X. A. Cao, C. R. Abernathy, Solid-State Electronics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringGan Epi-layer	2000	13

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